Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte

Abstract The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different resistive-switching characteristics. Herein, we describe ECM comprising the same ferroelectric PbZr 0.52 Ti 0.48 O 3 (PZT) electrolyte, which can sustain both behavior depending on identity active electrode. Ag/PZT/La 0.8 Sr 0.2 MnO (LSMO) threshold switching memristor shows abrupt volatile resistive characteristics, lead with stochastic integration-and-fire behavior, auto-recovery, rapid operation. In contrast, Ni/PZT/LSMO memory exhibits gradual, non-volatile leads a high on/off ratio, low on-state current, variability, spike-timing-dependent plasticity (STDP). divergent is attributed greater control cation migration through ultrathin PZT. Thus, offer promise as essential building blocks construction high-performance neuromorphic computing systems.